Emitter excess resistance in GaAlAs/GaAs heterojunction bipolar transistors
✍ Scribed by T. Camps; A. Marty; J. Tasselli; A. Cazarré; J.P. Bailbé
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 690 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0038-1101
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## We haue fabricated graded-GaAsP-base HBTs with InGaP emitters for the first time. Compared with the uniform-GaAs-base HBTs, current gain increased by a factor of 2 due to built-in field in the graded base. 0 19% John Wiley & Sons, Inc.
## Abstract This paper describes the DC and small‐signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter–base designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff a