Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals

✍ Scribed by Alonso, M. I. ;Garriga, M. ;Bernardi, A. ;Goñi, A. R. ;Lopeandia, A. F. ;Garcia, G. ;Rodríguez-Viejo, J. ;Lábár, J. L.

• Book ID: 105364786
• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 463 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200777851

✦ Synopsis

Abstract

We studied the dielectric functions of Ge nanocrystals obtained by crystallization of amorphous Ge thin films embedded in SiO~2~. Partial crystallization of films was induced by thermal annealing. Crystalline regions gave rise to clear spectral features due to interband transitions whose critical point parameters correlated with the initial a‐Ge thickness. These changes were clearly attributed to quantum confinement effects. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)