Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer

✍ Scribed by McMorrow, D.; Weatherford, T.R.; Curtice, W.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Lan Hu Tran, ; Campbell, A.B.

• Book ID: 118166925
• Publisher: IEEE
• Year: 1995
• Tongue: English
• Weight: 760 KB
• Volume: 42
• Category: Article
• ISSN: 0018-9499
• DOI: 10.1109/23.488787