Electrostatic force microscopy studies of surface defects on GaAs/Ge films
β Scribed by Xu, Q.; Hsu, J. W. P.
- Book ID
- 121704490
- Publisher
- American Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 1010 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.369622
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The formation of multi-atomic steps (step-flow growth with step-bunching) on the surface of 111-V semiconductor compounds during metal-organic vapor-phase epitaxial (MOVPE) growth is a phenomenon of considerable significance. As low-dimensional material arrangements are widely used in novel opto-and
## Abstract Electrostatic force microscopy (EFM) has been used to probe the conducting properties of the hydrogenβterminated (Hβterminated) surface of CVD diamond films. Two parallel electrodes, separated by a distance of 100 Β΅m, are fabricated on the sample surface. EFM images the voltage distribu