Electroreflectance of impurities in GaAs: Manganese, silicon and cadmium
โ Scribed by E.W. Williams
- Publisher
- Elsevier Science
- Year
- 1969
- Tongue
- English
- Weight
- 293 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0038-1098
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A nalylica Cirimicn rlclu Mscvier Publishing Company, Amsterdam l'rinlcd in The Netherlands 505 THE DETERMINATION OF NICKEL, ZINC, COUALT AND MANGANESE IMPURITIES IN CADMIUM BY PULSE I'OLAROGRAPI~Y Cadmium is often recovcrcd as a by-product of tllc zinc industry. Both clements are ratlier easy sepa
We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AIGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximat