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Electron–phonon interactions in the wide band‐gap semiconductor GaN

✍ Scribed by Sheih, S. J.; Tsen, K. T.; Ferry, D. K.; Botchkarev, A.; Sverdlov, B.; Salvador, A.; Morkoc, H.


Book ID
118737909
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
367 KB
Volume
67
Category
Article
ISSN
0003-6951

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Temperature dependent band gap shrinkage
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We present an experimental investigation of temperature dependent band-gap shrinkage in GaN using photoluminescence spectroscopy. The near-band-edge transition energy shifts to lower energy with increasing temperature. The parameters that describe the temperature-dependent red-shift of the bandedge