𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Temperature dependent band gap shrinkage in GaN: Role of electron–phonon interaction

✍ Scribed by Niladri Sarkar; Subhasis Ghosh

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
973 KB
Volume
149
Category
Article
ISSN
0038-1098

No coin nor oath required. For personal study only.

✦ Synopsis

We present an experimental investigation of temperature dependent band-gap shrinkage in GaN using photoluminescence spectroscopy. The near-band-edge transition energy shifts to lower energy with increasing temperature. The parameters that describe the temperature-dependent red-shift of the bandedge transition energy are evaluated using different models. It has been found that the semi-empirical relation based on phonon-dispersion related spectral function leads to an excellent fit to the experimental data.

📜 SIMILAR VOLUMES

Comparison of Exciton–Biexciton with Bou
Comparison of Exciton–Biexciton with Bound Exciton–Biexciton Dynamics in GaN: Quantum Beats and Temperature Dependence of the Acoustic-Phonon Interaction
✍ K. Kyhm; R.A. Taylor; J.F. Ryan; T. Aoki; M. Kuwata-Gonokami; B. Beaumont; P. Gi 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 108 KB 👁 1 views

The polarization dependence of biexcitonic signals and quantum beats between A-excitons (X A ) and A-biexcitons (X A X A ) in a high-quality GaN epilayer is measured by spectrally-resolved and time-integrated four-wave mixing. With cross-linear polarised light, mixed beats with two periods are obser