ZnO nanowires were electrodeposited by using a template approach. Ion track polycarbonate foils (30 mm thick) were used as templates. Current-voltage (I-V) characteristics were recorded in the temperature range 40-300 K. I-V characteristics show a symmetric, non-linear shape, at temperatures greater
Electronic transport properties in copper nanowire
β Scribed by Saeideh Mohammadzadeh; Davoud Pouladsaz; Reinhard Streiter; Thomas Gessner
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 228 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0167-9317
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β¦ Synopsis
In present work, we study the electronic transport properties of copper nanowire using the non-equilibrium Green's function technique on the density functional tight binding method for modelling the conductance under external bias voltage. We also carried out the calculations for the Au nanowire for comparison.
π SIMILAR VOLUMES
We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag + ions on the wafer surface. Th