Electronic transport phenomena in semiconductive phase of BaPb1−xBixO3
✍ Scribed by Hidetoshi Minami; Taizo Masumi; Hiroshi Shimada
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 151 KB
- Volume
- 185-189
- Category
- Article
- ISSN
- 0921-4534
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Synchrotron-excited pho:oemission is used to explore the evolution in the electronic structure of the BaPbl.xBixO3 system as a function of x, using cleaved single crystal and scraped ceramic samples. At the metalto-non-metal transition point, a sharp change in surface reactivity is revealed, with me
We have measured photoemission spectra of BaPbl-xBixO3 and extracted new information about their electronic structure. O 2p non-bonding states are located around the top of the valence band and possibly form the metallic states at the Fermi levei. O 2p-Bi 6s anti-bonding states are located around 1