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The electronic structure of BaPb1−xBixO3 studied by photoemission spectroscopy

✍ Scribed by H. Namatame; A. Fujimori; H. Eisaki; H. Takagi; S. Uchida


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
182 KB
Volume
185-189
Category
Article
ISSN
0921-4534

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✦ Synopsis


We have measured photoemission spectra of BaPbl-xBixO3 and extracted new information about their electronic structure. O 2p non-bonding states are located around the top of the valence band and possibly form the metallic states at the Fermi levei. O 2p-Bi 6s anti-bonding states are located around 1 eV below the Fermi level forming a gap or pseudogap in Bi substituted samples, and their bonding counterpart is located both at mound 6 and 10 eV corresponding to the splitting of the antibonding states.


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Synchrotron-excited pho:oemission is used to explore the evolution in the electronic structure of the BaPbl.xBixO3 system as a function of x, using cleaved single crystal and scraped ceramic samples. At the metalto-non-metal transition point, a sharp change in surface reactivity is revealed, with me