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Electronic transport in P-doped laser-crystallized polycrystalline silicon

✍ Scribed by K.v. Maydell; S. Brehme; N.H. Nickel; W. Fuhs


Book ID
108287798
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
123 KB
Volume
487
Category
Article
ISSN
0040-6090

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## Abstract The defect properties of laser‐crystallized polycrystalline silicon–germanium (Si–Ge) thin films on glass substrates were investigated with electron spin resonance (ESR) and conductivity measurements. The ESR measurements reveal that laser‐crystallized poly Si~1βˆ’__x__~Ge~__x__~ thin fil