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An electron-spin-resonance study of laser crystallized polycrystalline silicon

✍ Scribed by K. Brendel; N.H. Nickel; K. Lips; W. Fuhs

Book ID
116667727
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
348 KB
Volume
338-340
Category
Article
ISSN
0022-3093

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## Abstract The defect properties of laser‐crystallized polycrystalline silicon–germanium (Si–Ge) thin films on glass substrates were investigated with electron spin resonance (ESR) and conductivity measurements. The ESR measurements reveal that laser‐crystallized poly Si~1βˆ’__x__~Ge~__x__~ thin fil