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Electronic structures of silicon doped ZnO

✍ Scribed by R. Chowdhury; P. Rees; S. Adhikari; F. Scarpa; S.P. Wilks

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
385 KB
Volume
405
Category
Article
ISSN
0921-4526

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✦ Synopsis

We have calculated the electronic structure of ZnO systems doped with Silicon (Si) using generalized gradient approximation. We found that a donor level is formed while Zn is substituted by Si. The variation in band gap is calculated as a function of Si concentration in Zn 1 À x Si x O ð0 r xr 12:5Þ system and comparisons are made with recently published experimental results. Further, we observed that, substitution of Si at O site forms deep acceptor levels near the top of the valence band, and thereby a weak p-type transformation of the system can be realized.

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