Effect of La doping on the electronic structure and optical properties of ZnO
β Scribed by S.H. Deng; M.Y. Duan; M. Xu; L. He
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 446 KB
- Volume
- 406
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
β¦ Synopsis
The electronic structure and optical properties of ZnO doped with La have been investigated using density functional theory based on first-principles ultrasoft pseudopotential method. The calculated results show that the La doping increases the bandgap of ZnO, in agreement with the experimental results; while the Fermi level shifts into the conduction band, revealing the so-called Burstein-Moss effect. In comparison to pure ZnO, a new peak appears in the imaginary part of dielectric function in the system doped with La and the optical absorption edge has been obviously changed. Moreover, the covalent property of Zn 1 Γ x La x O is found to weaken with the increase of La concentration.
π SIMILAR VOLUMES
Recent experiments reported fascinating phenomenon of photoluminescence (PL) blueshift in Ge-doped ZnO. To understand it, we examined the structural, electronic and optical properties of Gedoped ZnO (ZnO:Ge) systematically by means of density functional theory calculations. Our results show that Ge
## Abstract A lowβtemperature synthetic route was used to prepare oriented arrays of ZnO nanorods on ITO conducting glass substrate coated with buffer layer of ZnO seeds in an aqueous solution. The corresponding growth behavior and optical properties of ZnO nanorod arrays were studied. It was found