Electronic structures of Fe3-xVxSi probed by photoemission spectroscopy

✍ Scribed by Cui, Y. T. ;Kimura, A. ;Miyamoto, K. ;Sakamoto, K. ;Xie, T. ;Qiao, S. ;Nakatake, M. ;Shimada, K. ;Taniguchi, M. ;Fujimori, S.-I. ;Saitoh, Y. ;Kobayashi, K. ;Kanomata, T. ;Nashima, O.

• Book ID: 105364046
• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 193 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200669648

✦ Synopsis

Abstract

The electronic structures of the Heusler type compounds Fe~3–x~ V~x~ Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core‐ level and the main valence band structres indicates a chemical potential shift to higher energy with increasing x . It is also clarified that the density of state at Fermi edge is owing to the collaboration of V 3d and Fe 3d derived states. Besides the decrease of the spectral intensity near Fermi edge with increasing x suggests the formation of pseudo gap at large x . (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)