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Electronic structure of the Ge/RbF/GaAs(100) heterostructure: LCAO calculations

✍ Scribed by Barbara Stankiewicz

Book ID
112568594
Publisher
Springer
Year
1993
Tongue
English
Weight
228 KB
Volume
43
Category
Article
ISSN
0011-4626

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Layer resolved density of states has been calculated for N-and Ga-terminated gallium nitride (100) surfaces, using the semiempirical LCAO method with self-consistently correctedparameters for the surfaces. Surface states on both N-and Ga-terminated surfaces have been found. Localization properties o

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LDA᎐LCAO molecular orbital calculations were carried out on various clusters modeling Ž . a tungsten tip and an Al 100 surface interaction. The surface is depicted by Al x Ž . Ž aggregates x varying from 5 to 66 while the tip is modeled by W clusters y s y . 1, 5, 10, 14 . Electronic structures were