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Electronic properties of the Ge/RbF/GaAs system: the effect of the RbF intralayer

โœ Scribed by B. Stankiewicz


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
535 KB
Volume
280
Category
Article
ISSN
0040-6090

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Effect of temperature on the mutual diff
โœ Matteo Bosi; Giovanni Attolini; Claudio Ferrari; Cesare Frigeri; Marco Calicchio ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 394 KB

We studied the diffusion of Ge, As and Ga in GaAs/Ge and Ge/GaAs epilayers grown at different temperatures by metal-organic vapor phase epitaxy using iso-butylgermane, arsine and trimethylgallium in hydrogen atmosphere at low pressure. The use of low temperature buffer layers was investigated in ord