Electronic structure of silicon superlat
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Srinivasan Krishnamurthy; John A. Moriarty
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Article
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1985
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Elsevier Science
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English
β 402 KB
Utilizing a new complex-band-structure technique, the electronic structure of model Si-Sil\_xGe x and MOS superlattices have been obtained over a wide range of layer thickness d (11 ~ d ~ 110 A). For d ~ 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations