Electronic Structure of Semiconductor Heterojunctions

✍ Scribed by Giorgio Margaritondo (auth.), Giorgio Margaritondo (eds.)

• Publisher: Springer Netherlands
• Year: 1988
• Tongue: English
• Leaves: 347
• Series: Perspectives in Condensed Matter Physics 1
• Edition: 1
• Category: Library

✦ Table of Contents

Front Matter....Pages I-XII
Front Matter....Pages XIII-XIII
Introduction....Pages 1-31
Front Matter....Pages 33-33
Experiments on Ge-GaAs Heterojunctions....Pages 35-48
Growth of Microstructures by Molecular Beam Epitaxy....Pages 49-55
A Bird’s-Eye View on the Evolution of Semiconductor Superlattices and Quantum Wells....Pages 56-69
Compositionally Graded Semiconductors and their Device Applications....Pages 70-98
Resonant Tunneling Through Double Barriers, Perpendicular Quantum Transport Phenomena in Superlattices, and Their Device Applications....Pages 99-115
Heterostructure Devices: A Device Physicist Looks at Interfaces....Pages 116-149
Direct observation of effective mass filtering in InGaAs/lnP superlattices....Pages 150-152
Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction....Pages 153-156
Ge—GaAs(110) interface formation....Pages 157-162
Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs....Pages 163-166
Internal Photoemission in GaAs/(Al x Ga 1−x )As Heterostructures....Pages 167-172
Quantum States of Confined Carriers in Very Thin Al x Ga 1-x As-GaAs-Al x Ga 1-x As Heterostructures....Pages 173-176
Schottky barriers: An effective work function model....Pages 177-179
Defective Heterojunction Models....Pages 180-192
Heterojunctions: Definite breakdown of the electron affinity rule....Pages 193-195
Parabolic quantum wells with the GaAs-Al x Ga 1−x As system....Pages 196-199
Role of d Orbitals in Valence-Band Offsets of Common-Anion Semiconductors....Pages 200-203
Common-anion rule and its limits: Photoemission studies of CuIn x Ga 1 − x Se 2 -Ge and Cu x Ag 1 − x InSe 2 -Ge interfaces....Pages 204-207
Elementary theory of heterojunctions....Pages 208-213
Front Matter....Pages 33-33
Schottky Barrier Heights and the Continuum of Gap States....Pages 214-217
Theory of semiconductor heterojunctions: The role of quantum dipoles....Pages 218-221
Comment on “Theory of semiconductor heterojunctions: The role of quantum dipoles”....Pages 222-223
Tight-binding theory of heterojunction band lineups and interface dipoles....Pages 224-229
Energy barriers and interface states at heterojunctions....Pages 230-248
Acoustic deformation potentials and heterostructure band offsets in semiconductors....Pages 249-261
Self-consistent electronic structure of (110) Ge-ZnSe....Pages 262-267
Theoretical study of band offsets at semiconductor interfaces....Pages 268-279
Interface phenomena at semiconductor heterojunctions: Local-Density valence-band offset in GaAs/AlAs....Pages 280-283
A universal trend in the binding energies of deep impurities in semiconductors....Pages 284-286
Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band Discontiuities....Pages 287-290
Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriers....Pages 291-303
Understanding and controlling heterojunction band discontinuities....Pages 304-306
Role of Virtual Gap States and Defects in Metal-Semiconductor Contacts....Pages 307-310
Pressure Dependence of Band Offsets in an InAs-GaSb Superlattice....Pages 311-314
Tunable barrier heights and band discontinuities via doping interface dipoles: An interface engineering technique and its device applications....Pages 315-321
Heterojunction band discontinuity control by ultrathin intralayers....Pages 322-324
Dipole-Induced Changes of the Band Discontinuities at the SiO 2 -Si Interface....Pages 325-328
Back Matter....Pages 329-338

✦ Subjects

Solid State Physics;Spectroscopy and Microscopy;Surfaces and Interfaces, Thin Films;Condensed Matter Physics