Electronic Structure of Metal-Semiconductor Contacts

✍ Scribed by Winfried Mönch (auth.), Winfried Mönch (eds.)

• Publisher: Springer Netherlands
• Year: 1990
• Tongue: English
• Leaves: 301
• Series: Perspectives in Condensed Matter Physics 4
• Edition: 1
• Category: Library

✦ Synopsis

Interface and surface science have been important in the development of semicon­ ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor­ insulator interfaces, heterojunctions between distinct semiconductors, and metal­ semiconductor contacts. The latter ones stood almost at the very beginning of semi­ conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

✦ Table of Contents

Front Matter....Pages I-XII
Introduction....Pages 1-33
Ueber die Stromleilung dutch Schwefelmetalle....Pages 37-44
Zum Mechanismus der Richtwirkung in Kupferoxydulgleichrichtern....Pages 45-52
Halbleitertheorie der Sperrschicht....Pages 53-53
Note on The Contact Between a Metal and an Insular or Semi-Conductor....Pages 54-58
Abweichungen vom Ohmschen Gesetz in Halbleitern....Pages 59-62
Surface States and Rectification at a Metal Semi-Conductor Contact....Pages 63-73
Surface States and Barrier Height of Metal-Semiconductor Systems....Pages 74-82
Theory of Surface States....Pages 83-90
Fundamental Transition in The Electronic Nature of Solids....Pages 91-94
Density of states and barrier height of metal-Si contacts....Pages 95-104
Metal-semiconductor Junctions for (110) Surfaces of Zinc-blende Compounds....Pages 105-115
Electronic structure of a metal-semiconductor interface....Pages 116-124
Ionicity and the theory of Schottky barriers....Pages 125-133
Chemical trends in metal-semiconductor barrier heights....Pages 134-137
Transition in Schottky Barrier Formation with Chemical Reactivity....Pages 138-141
New and unified model for Schottky barrier and III-V insulator interface states formation....Pages 142-152
Schottky barriers: An effective work function model....Pages 154-156
The formation of the Schottky barrier at the V/Si interface a) ....Pages 157-160
Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi 2 Epitaxial Structures....Pages 161-164
Schottky Barrier Heights and the Continuum of Gap States....Pages 165-168
Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces....Pages 169-172
Reflection high-energy electron diffraction study of the growth of In on GaAs(110) at different temperatures....Pages 173-184
Direct variation of metai-GaAs schottKy barrier height by the influence of interface S, Se, and Te....Pages 185-187
Interface potential changes and Schottky barriers....Pages 188-190
Ruthenium-induced surface states on n -GaAs surfaces....Pages 191-198
Metallization and Scottky Contacts....Pages 199-201
On the Present Understanding of Schottky Contacts....Pages 202-223
Role of Virtual Gap States and Defects in Metal-Semiconductor Contacts....Pages 224-227
Initial stages of Schottky barrier formation: Temperature effects....Pages 228-232
Kinetics study of initial stage band bending at metal GaAs(110) interfaces....Pages 233-237
The Schottky Contact in a Xe/Metal Interface Probed by Inverse Photoemission....Pages 238-243
Origin of the Excess Capacitance at Intimate Schottky Contacts....Pages 244-247
Correlation between E F Pinning and Development of Metallic Character in Ag Overlayers on GaAs(ll0)....Pages 248-251
Direct Investigation of Subsurface Interface Electronic Structure by Ballistic-Electron-Emission Microscopy....Pages 252-255
Chemical trends in Schottky barriers: Charge transfer into adsorbate-induced gap states and defects....Pages 256-259
The advanced unified defect model for Schottky barrier formation....Pages 260-266
Screening and delocalization effects in Schottky barrier formation....Pages 267-274
Tight-Binding Model of Surface Donor-States Induced by Metal Adatoms on GaAs(llO) Surfaces....Pages 275-279
Switching of Band Bending at the Nonreactive CsO x /GaAs(l10) Interface....Pages 280-283
Metallicity and Gap States in Tunneling to Fe Ousters on GaAs(llO)....Pages 284-287
Back Matter....Pages 289-293

✦ Subjects

Surfaces and Interfaces, Thin Films;Physical Chemistry;Electrical Engineering;Condensed Matter Physics