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Electronic structure of light emitting centers in Er doped Si

✍ Scribed by L.V.C. Assali; F. Gan; L.C. Kimerling; J.F. Justo

Publisher
Springer
Year
2003
Tongue
English
Weight
344 KB
Volume
76
Category
Article
ISSN
1432-0630

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The influence of the p-n junction breakdown mechanism on the Er 3+ electroluminescence (EL) intensity and excitation efficiency (an intra 4f transition 4 I 13/2 β†’ 4 I 15/2 of Er 3+ ion at the wavelength of 1.54 m) has been investigated in Si:Er light emitting diodes (LED) grown with sublimation mole