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Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

✍ Scribed by KlenovskyÌ, P.; KrÌaÌpek, V.; Munzar, D.; HumliÌcÌek, J.

Book ID: 120019185
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 593 KB
Volume: 97
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3517446

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