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Electronic structure of asymmetric vertically coupled InAs/GaAs quantum dots

โœ Scribed by V.N. Stavrou


Book ID
113849962
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
565 KB
Volume
407
Category
Article
ISSN
0921-4526

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Hole emission from single and vertically coupled quantum dots (SQD and VCQD) in InAs/GaAs p-n heterostructures under varied reverse bias and the influence exerted on this process by the Coulomb interaction between the quantum dots and point defects situated near the dots has been studied by capacita