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Electronic structure of amorphous and microscrystalline a-GaAs(:H)

✍ Scribed by R. Kärcher; Z.P. Wang; L. Ley


Book ID
118332439
Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
165 KB
Volume
59-60
Category
Article
ISSN
0022-3093

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Electronic structure and stability of am
✍ K. H. J. Buschow; H.-J. Eifert; B. Elschner 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 546 KB

## Abstract Amorphous alloys Pd~1−__x__~Si~__x__~ near __x__ = 0.2 doped with small amounts of Gd are prepared by melt spinning. The __g__‐shift, the residual linewidth, and the thermal broadening of the EPR linewidth are determined. Doped and undoped amorphous alloys are also investigated by means