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Electronic structure and stability of amorphous PdSi alloys

โœ Scribed by K. H. J. Buschow; H.-J. Eifert; B. Elschner


Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
546 KB
Volume
115
Category
Article
ISSN
0370-1972

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โœฆ Synopsis


Abstract

Amorphous alloys Pd~1โˆ’x~Si~x~ near x = 0.2 doped with small amounts of Gd are prepared by melt spinning. The gโ€shift, the residual linewidth, and the thermal broadening of the EPR linewidth are determined. Doped and undoped amorphous alloys are also investigated by means of differential scanning calorimetry. Values are reported for the glass temperatures, crystallization temperatures, heat of crystallization, and heat of activation. It is shown that electronic properties of amorphous alloys are unlikely to exert much influence on the thermal stability of these alloys.


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