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Electronic structure of Al, P, S, and Cl impurities in silicon

✍ Scribed by M. Thiagarajan; K. Iyakutti; E. Palaniyandi; M. Mahendran

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
385 KB
Volume
58
Category
Article
ISSN
0020-7608

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✦ Synopsis

We report a fully self-consistent investigation of the electronic structure, relation between charge transfer and electronegativity, bonding characteristics, and alloying of Al, P, S, and C1 with silicon. The present study indicates that the charge transfer from the host Si atoms to the central impurity atom increases with electronegativity of the impurity element. The bonding between host Si atoms and the impurity atoms is ionic in nature.

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