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Electronic structure in thin film organic semiconductors studied using soft X-ray emission and resonant inelastic X-ray scattering

✍ Scribed by Yufeng Zhang; James E. Downes; Shancai Wang; Timothy Learmonth; Lukasz Plucinski; A.Y. Matsuura; Cormac McGuinness; Per-Anders Glans; Sarah Bernardis; Cian O'Donnell; Kevin E. Smith


Book ID
108289300
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
496 KB
Volume
515
Category
Article
ISSN
0040-6090

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## Abstract Hydrogenated amorphous silicon nitride thin films (a‐Si~1–__x__~ N__~x~__:H) with __x__ = 0.46, 0.54, 0.55 and 0.58 have been studied. The optical bandgaps of these materials were 2.41, 2.78, 3.29 and 3.85 eV and Urbach edge bandgaps were 2.80, 3.27, 3.85 and 4.04 eV (W. C. Tan et al.,