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Electronic structure calculations of an oxygen vacancy in

✍ Scribed by Liu, C. S.; Hou, C. J.; Kioussis, Nicholas; Demos, S. G.; Radousky, H. B.


Book ID
120350713
Publisher
The American Physical Society
Year
2005
Tongue
English
Weight
197 KB
Volume
72
Category
Article
ISSN
1098-0121

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Electronic structure of oxygen vacancy i
✍ W.-J. Lee; B. Ryu; K.J. Chang πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 393 KB

We perform first-principles theoretical calculations to investigate the defect properties of oxygen vacancy (V O ) in crystalline InGaO 3 (ZnO) m (m ΒΌ 3). In a flat boundary structure, in which Ga atoms are located on a single plane, various configurations of V O exist. We find that neutral V O at a