The electronic structure of hexagonal GaN is studied using two simulation techniques in order to develop a method to interpret the fine-structure of an experimental nitrogen K-edge electron energy loss spectrum obtained using a scanning transmission electron microscope. The application of these simu
Electronic structure calculations Bi4Ge3O12 with the MSXα method. Comparison with experimental data
✍ Scribed by François Rogemond; Christian Pedrini; Henry Chermette
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 794 KB
- Volume
- 146
- Category
- Article
- ISSN
- 0301-0104
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