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Electronic structure and magnetism in doped semiconducting half-Heusler compounds

✍ Scribed by Nanda, B R K; Dasgupta, I

Book ID
119961395
Publisher
Institute of Physics
Year
2005
Tongue
English
Weight
355 KB
Volume
17
Category
Article
ISSN
0953-8984

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Semiconducting half-Heusler and LiGaGe s
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✍ Casper, Frederick ;Seshadri, Ram ;Felser, Claudia πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 580 KB

## Abstract Compounds with LiAlSi (half‐Heusler) and LiGaGe structure types have been investigated by means of band structure calculations. The LiAlSi structure type is known as the half‐Heusler structure type, whereas LiGaGe is a closely related hexagonal variant. A remarkable feature of some __XY