✦ LIBER ✦

Electronic states and effective negative electron affinity at cesiated p-GaN surfaces

✍ Scribed by Wu, C. I.; Kahn, A.

Book ID: 120251543
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 321 KB
Volume: 86
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.371191

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Negative electron affinity and electron

Negative electron affinity and electron emission at cesiated GaN and AlN surfaces

✍ C.I. Wu; A. Kahn 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 205 KB

Low-temperature method of cleaningp-GaN(

Low-temperature method of cleaningp-GaN(0001) surfaces for photoemitters with effective negative electron affinity

✍ O. E. Tereshchenko; G. É. Shaibler; A. S. Yaroshevich; S. V. Shevelev; A. S. Ter 📂 Article 📅 2004 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 104 KB

Coadsorption of Cs and O on GaAs: format

Coadsorption of Cs and O on GaAs: formation of negative electron affinity surfaces at different temperatures

✍ S Moré; S Tanaka; S Tanaka; Y Fujii; M Kamada 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 198 KB

Polarization effects, surface states, an

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

✍ Ibbetson, J. P.; Fini, P. T.; Ness, K. D.; DenBaars, S. P.; Speck, J. S.; Mishra 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 348 KB

Effects of surface modifications on band

Effects of surface modifications on band gaps and electronic states of GaN/InN core/shell nanowires

✍ M.X. Xiao; M. Zhao; Q. Jiang 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 739 KB

Effect of electron-phonon interaction on

Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure

✍ Z.W. Yan; S.L. Ban; X.X. Liang 📂 Article 📅 2003 🏛 Springer 🌐 English ⚖ 281 KB