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Electronic properties of the AlAs-GaAs (001) interface and superlattice

โœ Scribed by Schulman, J. N.; McGill, T. C.


Book ID
121715181
Publisher
The American Physical Society
Year
1979
Tongue
English
Weight
659 KB
Volume
19
Category
Article
ISSN
1098-0121

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X-Ray Diffraction Analysis of the In/Ga
โœ Jose Fayos; Mercedes Perez-Mendez ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 225 KB

Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice