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Electronic properties of strained Si/Ge superlattices: tight binding approach

✍ Scribed by G. Theodorou; C. Tserbak; H.M. Polatoglou


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
230 KB
Volume
222
Category
Article
ISSN
0040-6090

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We present a theoretical study of the energies and localizations of bound electronic states in a finite AlAs/GaAs superlattice (SL) with an enlarged centered GaAs quantum well (EW). The calculations are performed using a semi-empirical sp 3 s \* spin dependent tight-binding model and the surface Gre