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Electronic properties of disordered SiC materials

โœ Scribed by O. Chauvet; L. Zuppiroli; I. Solomon


Book ID
103953282
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
251 KB
Volume
11
Category
Article
ISSN
0921-5107

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Electronic properties of BaTiO3/4H-SiC i
โœ M. Sochacki; P. Firek; N. Kwietniewski; J. Szmidt; W. Rzodkiewicz ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 156 KB

The possibility of barium titanate (BaTiO 3 ) application in silicon carbide (SiC) technology has been elaborated in terms of the dielectric film quality and properties of the BaTiO 3 /4H-SiC interface. High resistivity, high-k thin films containing La 2 O 3 admixture were applied as gate insulator