Electronic properties of defects created by 1.6 GeV argon ions in silicon

✍ Scribed by J. Krynicki; M. Toulemonde; J.C. Muller; P. Siffert

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 483 KB
• Volume: 2
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90084-6

✦ Synopsis

Defects introduced in n-type silicon wafers" by irradiation with 1.6 GeV Ar "~+ ions have been analysed using deep level transient spectroscopy. The defect spatial distribution has been measured along the whole path of the argon ions in a silicon crystal. 7he energy levels" and capture cross'sections for the observed defect traps have been determined. Several of the observed defect levels" (those at E c -0.18 eV, Ec-0.22 eV and E c-0.43 eV) can be correlated with defects which have already been identified in electron-irradiated si#con. However, some dejects levels lying near the midgap (those at Ec-0.33 eV, E~-0.47 eV, E~-0.49 eV, E~-0.54 eV and E~-0.63 eV) should be associated with more complex defects but the identification of their structure has not been possible. 7['he presence of defects deeper than the projected range of argon ions can be explained by the occurrence of nuclear reactions.