Electronic properties of CsxC60 films for the complete range of stoichiometries

✍ Scribed by J.M. Gildemeister; G.K. Wertheim

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 839 KB
• Volume: 220
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(94)00164-2

✦ Synopsis

Cs

-&, compounds were prepared by the reaction of Cso films with Cs vapor and investigated by means of photoemission spectroscopy. Samples of the whole range of stoichiometry Odxd6 were characterized. Upon doping the lowest unoccupied molecular orbital of CW which is derived from the t,, orbital becomes filled, but the material does not show metallic properties at any composition indicating that correlation effects remain signiiicant in the doped compound. The diffusion of Cs into the closely packed fee lattice of weakly doped Cso is very slow at room temperature. It becomes much faster after the phase transition to the more open bet and bee structures.