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Electronic levels and properties of the selfinterstitials in irradiated silicon

โœ Scribed by Kh.A. Abdullin; B.N. Mukashev; M.F. Tamendarov; T.B. Tashenov


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
251 KB
Volume
166
Category
Article
ISSN
0375-9601

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Silicon nitride layers of 140 nm thickness were deposited on silicon wafers by low pressure chemical vapour deposition (LPCVD) and irradiated at GANIL with Pb ions of 110 MeV up to a maximum fluence of 4 ร‚ 10 13 cm ร€2 . As shown in a previous work these irradiation conditions, characterized by a pre