Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation

✍ Scribed by Mamor, M.; Auret, F. D.; Goodman, S. A.; Meyer, W. E.; Myburg, G.

• Book ID: 121361737
• Publisher: American Institute of Physics
• Year: 1998
• Tongue: English
• Weight: 286 KB
• Volume: 72
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.121585