Electronic and structural properties of defects in c-BN
β Scribed by R. Mota; P. Piquini; T. M. Schmidt; A. Fazzio
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 236 KB
- Volume
- 65
- Category
- Article
- ISSN
- 0020-7608
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β¦ Synopsis
Using a molecular cluster with 71 atoms, we studied the electronic and structural properties of nitrogen vacancy, boron antisite, and oxygen in cubic boron nitride through an ab initio HartreeαFock calculation. We found that all defects introduce a deep state above the middle-energy gap. These defects present a C local symmetry. In 3v the case of nitrogen vacancy, the possibility of the F-center formation is discussed. All the calculations were performed using the program code GAMESS.
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