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Electronic and structural properties of defects in c-BN

✍ Scribed by R. Mota; P. Piquini; T. M. Schmidt; A. Fazzio


Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
236 KB
Volume
65
Category
Article
ISSN
0020-7608

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✦ Synopsis


Using a molecular cluster with 71 atoms, we studied the electronic and structural properties of nitrogen vacancy, boron antisite, and oxygen in cubic boron nitride through an ab initio Hartree᎐Fock calculation. We found that all defects introduce a deep state above the middle-energy gap. These defects present a C local symmetry. In 3v the case of nitrogen vacancy, the possibility of the F-center formation is discussed. All the calculations were performed using the program code GAMESS.


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