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Electron tunneling through chemical oxide of silicon

✍ Scribed by T. Hattori; K. Watanabe; M. Ohashi; M. Matsuda; M. Yasutake


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
299 KB
Volume
102
Category
Article
ISSN
0169-4332

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We investigate electron tunneling through ultrathin gate oxides using scattering theory within a tight-binding framework. We employ Si[100]/SiO 2 /Si[100] model junctions with oxide thicknesses between 7 and 18 Γ…. This approach accounts for the three-dimensional microscopic structure of the model ju