Tight-binding investigation of electron
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M. StΓ€dele; B.R. Tuttle; K. Hess; L.F. Register
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Article
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2000
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Elsevier Science
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English
β 126 KB
We investigate electron tunneling through ultrathin gate oxides using scattering theory within a tight-binding framework. We employ Si[100]/SiO 2 /Si[100] model junctions with oxide thicknesses between 7 and 18 Γ . This approach accounts for the three-dimensional microscopic structure of the model ju