Electron trapping levels in silicon dioxide thermally grown on silicon : J. H. Thomas and F. J. Feigl. J. Phys. Chem. Solids33 (1972), p. 2197

• Book ID: 103269941
• Publisher: Elsevier Science
• Year: 1973
• Tongue: English
• Weight: 114 KB
• Volume: 12
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(73)90426-5