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Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields

✍ Scribed by I. S. Vasil’evskii; G. B. Galiev; Yu. A. Matveev; E. A. Klimov; J. Požela; K. Požela; A. Sužiedėlis; Č. Paškevič; V. Jucienė

No coin nor oath required. For personal study only.

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