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Electron Spin Resonance of Phosphorus in n-Type Diamond

✍ Scribed by Graf, T. ;Brandt, M.S. ;Nebel, C.E. ;Stutzmann, M. ;Koizumi, S.

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
149 KB
Volume
193
Category
Article
ISSN
0031-8965

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Cold Implantation and Rapid Annealing (CIRA) at 1050 C of P in IIa diamond crystal, then further annealing at 1400 C were performed. EPR signals were obtained in particular (i) around g 2.003, from ``dangling bondΒΊ defects whose total concentration increases with the dose and decreases after anneali