Electron spin resonance in graphite damaged heavily in reactor

✍ Scribed by Sanchi Mizushima

• Publisher: Elsevier Science
• Year: 1968
• Tongue: English
• Weight: 402 KB
• Volume: 6
• Category: Article
• ISSN: 0008-6223
• DOI: 10.1016/0008-6223(68)90045-6

✦ Synopsis

Change of behaviour of ESR in artificial graphite with annealing which had been damaged heavily in reactor was studied. The irradiation dose was 5.8 x lOa nvt at 30°C. The temperature dependence of the absorption intensity showed that the spin centers were composed of free carriers and localized spins. The contribution from the free carriers decreased with the progress of annealing, which means the rising of the Fermi level toward the original position with the recovery of the lattice from defects, until it coincided roughly with the absorption intensity of unirradiated graphite after annealing at 1 lOO"C, for which the relevant spins are exclusively due to free carriers. The number of localized spins dropped from about 10zo per gram to a vanishingly small value after heat-treatment at 1000°C.