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Electron Screening and Mobility in Heavily Doped Silicon

✍ Scribed by H. K. Sy; D. K. Desai; C. K. Ong


Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
321 KB
Volume
130
Category
Article
ISSN
0370-1972

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The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102Β° cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed