Electron properties of dielectric-semiconductor interfaces in SiO2  αSi:H - langmuir-blodgett film structure

✍ Scribed by V.I. Antonenko; P.A. Todua; D.A. Znamensky; Yu.N. Moiseev; V.I. Panov

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 342 KB
• Volume: 81
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/0038-1098(92)90505-4