170. Investigation of interface levels in SiSiO2 structures after ion bombardment: Ya A Fedotov et al, Electronic Technology, Scient-tech Coll, Semiconductor Devices, No 4, 1971, 125–129 (in Russian)

• Publisher: Elsevier Science
• Year: 1973
• Tongue: English
• Weight: 138 KB
• Volume: 23
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(73)91605-9