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Electron mobility in heavily doped silicon : H. K. Sy and C. K. Ong. Solid St. Commun.52 (10), 881 (1984)

Publisher: Elsevier Science
Year: 1985
Tongue: English
Weight: 267 KB
Volume: 25
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(85)90321-x

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