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Electron-Microscopic Study of Microdefects in Silicon Single Crystals Grown at High Speed

✍ Scribed by Sitnikova, A. A. ;Sorokin, L. M. ;Talanin, I. E. ;Sheikhet, E. G. ;Falkevich, E. S.

Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
507 KB
Volume
81
Category
Article
ISSN
0031-8965

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## Abstract The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high‐energy electrons (18 MeV) has been performed by methods of the high‐resolution X‐ray diffraction. The concentrations and average