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Electron holography study on the microstructure of magnetic tunnelling junctions

✍ Scribed by Q.Y Xu; Y.G Wang; B You; J Du; A Hu; Z Zhang


Book ID
108290596
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
512 KB
Volume
98
Category
Article
ISSN
0304-3991

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Low-resistance magnetic tunneling junctions consisting of Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al (6.6 and 7.7 A)-oxide/CoFe/NiFe/Ta were fabricated with the plasma-oxidized insulation layer. Electrical properties and microstructure of the junctions are characterized before and after annealing the junction at